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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC856T; BC857T series PNP general purpose transistors
Product specification Supersedes data of 1999 Apr 26 2000 Nov 15
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES * Low current (max. 100 mA) * Low voltage (max. 65 V). APPLICATIONS * General purpose switching and amplification, especially in portable equipment. DESCRIPTION PNP transistor in an SC-75 (SOT416) plastic package. NPN complements: BC846T; BC847T series. MARKING TYPE NUMBER BC856AT BC856BT BC857AT BC857BT BC857CT MARKING CODE 3A 3B 3E 3F 3G Fig.1
handbook, halfpage
BC856T; BC857T series
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1
1 Top view
2
2
MAM362
Simplified outline (SC-75; SOT416) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VCEO collector-emitter voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 open collector open base - - - - - - - -65 - -65 -65 -45 -5 -100 -200 -100 150 +150 150 +150 V V V mA mA mA mW C C C CONDITIONS open emitter - - -80 -50 V V MIN. MAX. UNIT
2000 Nov 15
2
Philips Semiconductors
Product specification
PNP general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS PARAMETER thermal resistance from junction to ambient
BC856T; BC857T series
CONDITIONS in free air; note 1
VALUE 833
UNIT K/W
MIN. - - - 125 220 420 - - - - - - - - - - -
TYP.
MAX. -15 -5 -100 250 475 800 -200 -400 -700 -770 2.5 - - 10
UNIT nA A nA
collector-base cut-off current VCB = -30 V; IE = 0 VCB = -30 V; IE = 0; Tj = 150 C emitter cut-off current DC current gain BC856AT; BC857AT BC856BT; BC857BT BC857CT VEB = -5 V; IC = 0 VCE = -5 V; IC = -2 mA
VCEsat VBE Cc Ce fT F Note
collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure
IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA; note 1 IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V VCB = -10 V; f = 1 MHz; IE = ie = 0 VEB = -0.5 V; f = 1 MHz; IC = ic = 0 IC = -10 mA; VCE = -5 V; f = 100 MHz IC = -200 A; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz
- - -580 - - - 100 -
mV mV mV mV pF pF MHz dB
10 - -
1. Pulse test: tp 300 s; 0.02.
2000 Nov 15
3
Philips Semiconductors
Product specification
PNP general purpose transistors
GRAPHICAL INFORMATION BC857AT
MGT711
BC856T; BC857T series
handbook, halfpage
500
handbook, halfpage
hFE 400
(1)
-1200 VBE (mV) -1000 -800
MGT712
(1)
300 -600 200
(2)
(2)
-400 100
(3)
(3)
-200
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-2
-10-1
-1
-10
VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
-102 -103 I C (mA)
Fig.3 Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT713
handbook, halfpage
-1200 VBEsat (mV) -1000 -800 -600
MGT714
(1) (2)
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102 -103 I C (mA)
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2000 Nov 15
4
Philips Semiconductors
Product specification
PNP general purpose transistors
GRAPHICAL INFORMATION BC857BT
MGT715
BC856T; BC857T series
handbook, halfpage
1000
handbook, halfpage
hFE 800
-1200 VBE (mV) -1000 -800
MGT716
(1)
600
(1)
(2)
-600 -400 -200
(3)
400
(2)
200
(3)
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-2
-10-1
-1
-10
VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
-102 -103 I C (mA)
Fig.7 Fig.6 DC current gain; typical values.
Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT717
handbook, halfpage
-1200 VBEsat (mV) -1000 -800
MGT718
(1) (2)
-600
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102 -103 I C (mA)
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.8
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.9
Base-emitter saturation voltage as a function of collector current; typical values.
2000 Nov 15
5
Philips Semiconductors
Product specification
PNP general purpose transistors
GRAPHICAL INFORMATION BC857CT
MGT719
BC856T; BC857T series
handbook, halfpage
1000
handbook, halfpage
(1)
hFE 800
-1200 VBE (mV) -1000 -800
MGT720
(1)
600
(2) (2)
-600 -400
400
(3) (3)
200
-200
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-1 VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
-1
-10
-102
-103 I C (mA)
VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.10 DC current gain; typical values.
Fig.11 Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT721
handbook, halfpage
-1200 VBEsat (mV) -1000 -800
MGT722
(1) (2)
-600
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1 IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
-1
-10
-102 -103 I C (mA)
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a function of collector current; typical values.
2000 Nov 15
6
Philips Semiconductors
Product specification
PNP general purpose transistors
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BC856T; BC857T series
SOT416
D
B
E
A
X
vMA
HE
3
Q
A
1
e1 e bp
2
wM B
A1 c
Lp detail X
0
0.5 scale
1 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT416
REFERENCES IEC JEDEC EIAJ SC-75
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2000 Nov 15
7
Philips Semiconductors
Product specification
PNP general purpose transistors
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development
BC856T; BC857T series
DEFINITIONS (1) This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 Nov 15
8
Philips Semiconductors
Product specification
PNP general purpose transistors
NOTES
BC856T; BC857T series
2000 Nov 15
9
Philips Semiconductors
Product specification
PNP general purpose transistors
NOTES
BC856T; BC857T series
2000 Nov 15
10
Philips Semiconductors
Product specification
PNP general purpose transistors
NOTES
BC856T; BC857T series
2000 Nov 15
11
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Internet: http://www.semiconductors.philips.com
SCA 70
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Printed in The Netherlands
613514/03/pp12
Date of release: 2000
Nov 15
Document order number:
9397 750 07525

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